- WDM: Wavelength Division Multiplexing
One of the high speed and high capacity transmission system. Multiple wavelength lights are tranmitted through one fiber.
- Refractive index change in semiconductor material
Refractive index change in the semiconductor material is occurred by the temperature change, current injection or applied electric field.
|
Physical effect |
Temperature change |
Thermo-Optic effect |
Current injection |
Burstain-Moss effect |
Plasma effect |
Bandgap shrinkage |
Applied electric field |
Franz-Keldysh |
Quantum confined stark effect |
These effects have merits and demerits for the speed, consumption power, and wavelegth dependence.
|
Speed |
Consumption power |
Wavelength dependence |
TO effect |
△ |
△ |
◎ |
Plasma effect |
○ |
△ |
◎ |
Burstain-Moss effect |
○ |
△ |
△ |
QCSE |
◎ |
◎ |
△ |
- Kramers-Kronigh relationship
Refractive index coefficient in the semiconductor material is complex number. Real part shows the refractive index and imaginary part shows the absorption. These real part and imaginary part are related by the complex integration that is called Kramers-Kronigh relationship.
When the electric field is applied to the semiconductor material, the absorption edge wavelength is shifted to the longer wavelength by the Franz-Keldysh or QCSE effect, and the refractive index is changed at the same time. The following figure shows the refractive index change and absorption change as a function of wavelength.