7-1, Kioi-cho, Chiyoda-ku, Tokyo 102-8554
Room 4-275A
Paper
Paper
X. Han, K. Tsushima, T. Shirai, T. Ishizaki, and K. Shimomura, "Characteristics of multi-quantum-well laser diodes with surface electrode structure directly bonded to InP template on SiO2/Si substrate", Physica Status Solidi A, 2000767, Mar. 2021.
S. Yoshimura, K. Takano, K. Ishida and K. Shimomura, "Fabrication of star-shaped InP/GaInAs core-multishell nanowires by self-catalytic VLS mode", J. Crystal Growth, vol. 509, pp.66-70, Mar. 1, 2019.
H. Sugiyama, K. Uchida, X. Han, P. Gandhi Kallarasan, M.Aikawa, N. Hayasaka, K. Shimomura, "MOVPE grown GaInAsP/GaInAsP SCH-MQW laser diode on directly- bonded InP/Si substrate", J. Crystal Growth, vol. 507, pp. 93-97, Feb. 1, 2019.
M. Aikawa, Y. Onuki, N. Hayasaka, T. Nishiyama, N. Kamada, X. Han, P. Gandhi Kallarasan, K. Uchida, H. Sugiyama and K. Shimomura, "Bonding temperature dependence of GaInAsP/InP laser diode grown on hydrophilically directly bonded InP/Si substrate", Jpn. J. Appl. Phys., vol. 57, no. 2S1, 02BB04, pp.02BB04-1-6, Feb. 2018.
P. Gandhi Kallarasan, T. Nishiyama, N. Kamada, Y. Onuki, and K. Shimomura, "Lasing characteristics of 1.2 μm GaInAsP LD on InP/Si substrate", Physica Status Solidi A, 1700357, pp.1-7, Jan. 10, 2018.
K. Matsumoto, J. Kishikawa, T. Nishiyama, Y. Onuki, and K. Shimomura, "Novel integration method for III-V semiconductor devices on silicon platform", Jpn. J. Appl. Phys., vol.55, no.11, pp.112201-1 - 112201-7, Nov. 2016.
K. Matsumoto, J. Kishikawa, T. Nishiyama, T. Kanke, Y. Onuki, and K. Shimomura, "Room-temperature operation of GaInAsP lasers epitaxially grown on wafer-bonded InP/Si substrate", Applied Physics Express, vol. 9, 062701, May 2016.
T. Ogino, K. Asakura, K. Takano, T. Waho, and K. Shimomura, "Emission wavelength control of self-catalytic InP/GaInAs/InP core-multishell nanowire on InP substrate grown by MOVPE", Jpn. J. Appl. Phys., vol.55, no.3, 031201, Mar. 2016.
T. Ogino, M.Yamauchi, Y.Yamamoto, K.Shimomura, and T.Waho, "Preheating temperature and growth temperature dependence of InP nanowires grown by self-catalytic VLS mode on InP substrate", J. Crystal Growth, vol. 414, pp.161-166, Jan. 2015.
K. Matsumoto, X.Zhang, J.Kishikawa, and K.Shimomura, "Current-injected light emission of epitaxially grown InAs/InP quantum dots on directly bonded InP/Si substrate", Jpn. J. Appl. Phys., vol. 54, 030208, Jan. 2015.
K. Matsumoto, R. Kobie, and K. Shimomura, "Thermal treatment for preventing void formation on directly-bonded InP/Si interface", Jpn. J. Appl. Phys., vol.53, no.11, 116502, Oct. 2014.
S. Yoshikawa, M. Yamauchi, Y. Yamamoto, and K. Shimomura, "Current injected spectrum change in flat-topped InAs/InP QDs arrayed waveguide LED with different QD heights", Phys. Staus Solidi C, vol.10, no.11, pp.1438-1441, Nov. 2013.
K. Matsumoto, X. Zhang, Y. Kanaya, and K. Shimomura, "Selective MOVPE growth of GaInAs/InP MQW on directly-bonded InP/Si substrate", Phys. Staus Solidi C, vol.10, no.11, pp.1357-1360, Nov. 2013.
K. Matsumoto, T. Makino, K. Kimura, K. Shimomura, "Extremely improved InP template and GaInAsP system growth on directly- bonded InP/SiO2-Si and InP/glass substrate," Phys. Staus Solidi C, vol.10, no.5, pp. 782-785, May 2013.
S. Murakami , H. Funayama , K. Shimomura and T. Waho, "Au-assisted growth of InAs nanowires on GaAs(111)B, GaAs(100), InP(111)B, InP(100) by MOVPE," Phys. Staus Solidi C, vol.10, no.5, pp. 761-764, May 2013.
K. Matsumoto, T. Makino, K. Kimura, and K. Shimomura, "Growth of GaInAs/InP MQW using MOVPE on directly-bonded InP/Si substrate," J. Crystal Growth, vol.370, pp.133-135, May 2013.
S. Yoshikawa, T. Saegusa, Y. Iwane, M. Yamauchi and K. Shimomura, "Flat-topped emission with spectral width above 500 nm from InAs/InP QD waveguide array light-emitting diode", Applied Physics Express, vol.5, 092103, Sept. 2012.
S. Yanagi, Y. Murakami, Y. Yamazaki and K. Shimomura, "Switching characteristics in variable index arrayed waveguides using thin film heater", IEICE Trans. Electron., vol.E95-C, no. 7, pp. 1265-1271, July 2012.
T. Makino, T. Tanimura, S. Yanagi, and K. Shimomura, "Numerical calculation of wavelength demultiplexd light switching using variable index arrayed waveguide", IEICE Trans. Electron., vol.E95-C, no. 7, pp. 1258-1264, July 2012.
Y. Iwane, F. Kawashima, M. Hirooka, T. Saegusa, and K. Shimomura, "InAs/InP QDs
grown by selective MOVPE growth using double-cap procedure for broadband LED
improved p-cladding layer", Phys. Staus Solidi C, vol.9, no.2, pp.210-213, Feb.
2012.
F. Kawashima, R. Kobie, Y. Suzuki, and K. Shimomura, "Selective MOVPE
growth of InAs QDs using double-cap procedure," J. Crystal Growth,
vol.318, pp.1109-1112, 2011.
Y. Saito, T. Okawa, M. Akaishi, and K. Shimomura, "Wideband wavelength
electroluminescence from InAs/InP QDs using double-cap procedure by MOVPE
selective area growth," J. Crystal Growth, vol.310, issue 23, pp.5073-5076, Nov.
2008.
M. Akaishi, T. Okawa, Y. Saito, and K. Shimomura, "InAs/InP QDs with GaxIn1-xAs
cap layer by a double-cap procedure using MOVPE selective area growth," J.
Crystal Growth, vol.310, issue 23, pp.5069-5072, Nov. 2008.
M. Akaishi, T. Okawa, Y. Saito and K. Shimomura, "Wide emission wavelength
InAs/InP quantum dots grown by double-capped procedure using MOVPE selective
area growth," IEEE Journal on Selected Topics in Quantum Electronics, vol.14,
no.4, pp.1197-1203, Aug. 2008.
Y. Shimizu, S. Kawabe, H. Iwasaki, T. Sugio, and K. Shimomura, "Wavelength
switching using GaInAs/InP MQW variable refractive-index arrayed waveguides by
thermo-optic effect," IEICE Trans. Electron., vol.E91-C, no.7, pp.1110-1116,
July 2008.
International Conference
X. Han, K. Tsushima, M. Sato, T. Shirai, M. Sato, S. Ito, T. Ishizaki, K. Shibukawa, K. Agata and K. Shimomura, "Buried hetero structure laser diode on directly bonded InP/Si substrate", 27th International Semiconductor Laser Conference, Potsdam, Germany, WP1.13, Oct. 13, 2021.
X. Han, K. Tsushima, T. Shirai, M. Sato, S. Ito, T. Ishizaki, K. Shibukawa, K. Agata, M. Kotani and K. Shimomura, "MQW laser with surface electrodes on directly bonded InP/SiO2/Si substrates", 26th Optoelectronics and Communications Conference, Hong Kong, China, July 6, 2021.
K. Kuwahara, R. Ishihara, Y. Katori, and K. Shimomura, "Selective regrown core-shell nanowires using self-catalytic VLS mode", 26th Optoelectronics and Communications Conference, Hong Kong, China, July 4, 2021.
T. Shirai, X. Han, T. Ishizaki, K. Tsushima, M. Matsuura, K. Shibukawa, K. Fujiwara, M. Sato, and K. Shimomura, "Double capped InAs Quantum Dots with strain compensation layer grown on InP/Si substrate", 25th Optoelectronics and Communications Conference, Taipei, Taiwan, VP80, Oct. 7, 2020.
K. Shibukawa, X. Han, T. Ishizaki, K. Tsushima, T. Shirai, M. Matsuura, K. Fujiwara, M. Sato, and K. Shimomura, "Selective MOVPE growth of GAInAsP MQW structure on wafer bonded InP/Si and InP/SiO2/Si substrate", 25th Optoelectronics and Communications Conference, Taipei, Taiwan, VP78, Oct. 7, 2020.
K. Tsushima, T. Shirai, K. Fujiwara, X. Han, M. Matsuura, M. Sato, T. Ishizaki, K. Shibukawa, and K. Shimomura, "Buried heterostructure laser diodes using directly bonded InP thin film on silicon substrate", 25th Optoelectronics and Communications Conference, Taipei, Taiwan, T4-3.5, Oct. 7, 2020.
R. Ishihara, K. Kuwahara, S. Yoshimura, K. Ishida, and K. Shimomura, "Comparison of continuous growth and regrowth InP / GaInAs core-shell nanowires using self-catalytic VLS mode", Nanowire Week 2019, Pisa, Tuscany, Italy, P2.30, Sept. 24, 2019.
K. Kuwahara, R. Ishihara, K. Ishida, S. Yoshimura, and K. Shimomura, "Compositional analysis of InP/GaInAs heterostructure nanowires grown by self-catalytic VLS mode using MOVPE", Nanowire Week 2019, Pisa, Tuscany, Italy, P2.10, Sept. 24, 2019.
T. Ishizaki, K. Uchida, H. Sugiyama, X. Han, N. Hayasaka, M. Aikawa, M. Matsuura, K. Tsushima, T. Shirai, and K. Shimomura, "Lasing characteristics of GaInAsP SCH-MQW laser diode on directly-bonded InP/Si substrate", 24th OptoElectronics and Communications Conference (OECC/PSC 2019), Fukuoka International Congress Center, Fukuoka, Japan, WP4-D7, July 10, 2019.
T. Shirai, X. Han, M. Matsuura, T. Ishizaki, K. Tsushima, and K. Shimomura, "Template thickness dependence of GaInAsP MQW laser diode grown on directly bonded InP/Si substrate", 24th OptoElectronics and Communications Conference (OECC/PSC 2019), Fukuoka International Congress Center, Fukuoka, Japan, WP4-D6, July 10, 2019.
K. Tsushima, K. Uchida, X. Han, H. Sugiyama, M. Aikawa, N. Hayasaka, M. Matsuura, T. Ishizaki, T. Shirai, and K. Shimomura, "Lasing characteristics of GaInAsP SCH MQW high-mesa laser on silicon substrate", 24th OptoElectronics and Communications Conference (OECC/PSC 2019), Fukuoka International Congress Center, Fukuoka, Japan, WP4-D5, July 10, 2019.
P. Gandhi Kallarasan, K. Uchida, H. Sugiyama, X. Han, N. Hayasaka, M. Aikawa, H. Yada and K. Shimomura, "1.5 um GaInAsP high mesa laser diode on directly bonded InP/Si substrate", 26th International Semiconductor Laser Conference (ISLC2018), Santa Fe, New Mexico, USA, TuP22, Sept. 18, 2018.
H. Yada, N. Kamada, Y. Onuki, X. Han, P. Gandhi Kallarasan, K. Uchida, H. Sugiyama, M. Aikawa, N. Hayasaka, and K. Shimomura, "Successful fabrication of GaInAsP ridge waveguide laser diode using hydrophilic bonded InP/Si substrate", The 13th Pacific Rim Conference on Lasers and Electro-Optics (CLEO-PR 2018), Hong Kong Convention and Exhibition Centre, W3A.117, Aug. 1, 2018.
P. Gandhi Kallarasan and K. Shimomura, "MOVPE growth of GaInAsP system on directly bonded InP/Si substrate," EMN Vienna Meeting 2018, Vienna, Austria, A12 (Invited talk), June 19, 2018.
S. Yoshimura, K. Takano, K. Ishida, and K. Shimomura, "Fabrication of star shaped InP/GaInAs core-multi shell nanowires by self-catalytic VLS mode", 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara Kasugano International Forum, Nara, Japan, 8A-2.6, June 8, 2018.
K. Uchida, N. Kamada, Y. Onuki, X. Han, P. Gandhi Kallarasan, H. Sugiyama, M. Aikawa, N. Hayasaka, and K. Shimomura, "Lasing characteristics of GaInAsP/InP ridge waveguide laser diode grown on InP/Si substrate", 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara Kasugano International Forum, Nara, Japan, P2-33, June 7, 2018.
K. Ishida, K. Takano, S. Yoshimura, and K. Shimomura, "MOVPE growth of InP/GaInAs heterostructure nanowires by self-catalytic VLS mode", 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara Kasugano International Forum, Nara, Japan, P1-50, June 5, 2018.
H. Sugiyama, N. Kamada, Y. Onuki, X. Han, P. Gandhi Kallarasan, M. Aikawa, N. Hayasaka, K. Uchida, and K. Shimomura, "MOVPE grown GaInAsP/GaInAsP SCH-MQW laser diode on directly-bonded InP/Si substrate", 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara Kasugano International Forum, Nara, Japan, 5C-3.3, June 5, 2018.
P. Gandhi Kallarasan, N. Kamada, Y. Onuki, K. Uchida, H. Sugiyama, X. Han, N. Hayasaka, M. Aikawa, and K. Shimomura, "1.5 μm GaInAsP stripe laser comparison between InP substrate and directly bonded InP/Si substrate", Conference on Lasers and Electro-Optics 2018, San Jose Convention Center, San Jose, CA, USA, JTu2A.12, May 15, 2018.
K. Shimomura, "Hybrid integration of GaInAsP LD on silicon platform
by epitaxial growth using directly bonded InP/Si substrate", SPIE
Photonics Europe 2018, Strasbourg Convention & Exhibition Centre, Strasbourg,
France, Paper 10682-24 (Invited talk), Apr. 25, 2018.
K. Uchida, T. Nishiyama, N. Kamada, Y. Onuki, X. Han, Gandhi Kallarasan P., H. Sugiyama, M. Aikawa, N. Hayasaka, and K. Shimomura, "Lasing characteristics of GaInAsP stripe laser integrated on InP/Si substrate", The 22nd OptoElectronics and Communications Conference, Sands Expo and Convention Centre, Singapore, P3-123, Aug. 3, 2017.
H. Sugiyama, T. Nishiyama, N. Kamada, Y. Onuki, X. Han, Gandhi Kallarasan P., M. Aikawa, N. Hayasaka, K. Uchida, and K. Shimomura, "Low threshold current of GaInAsP laser grown on directly bonded InP/Si substrate", The 22nd OptoElectronics and Communications Conference, Sands Expo and Convention Centre, Singapore, P3-121, Aug. 3, 2017.
K. Takano, K. Asakura, S. Yoshimura, K. Ishida, K. Shimomura, "Photoluminescence characteristics of InP/GaInAs heterostructure nanowires grown by self-catalytic VLS mode", 10th Nanowire Growth Workshop, 9th NANOWIRES, Lund, Sweden, P2.12, May 30, 2017.
S. Yoshimura, K. Asakura, K. Takano, K. Ishida, K. Shimomura, "Regrown InP/GaInAs core-shell nanowires by self-catalytic VLS mode", 10th Nanowire Growth Workshop, 9th NANOWIRES, Lund, Sweden, P1.12, May 29, 2017.
K. Shimomura, "Novel integration method for III–V semiconductor devices on silicon platform based on direct bonding and MOVPE growth," 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, The University of Tokyo, Tokyo, Japan, 17GO-08 (Invited), May 17, 2017.
N. Hayasaka, T. Nishiyama, Y. Onuki, N. Kamada, X. Han, Gandhi Kallarasan P., K. Uchida, H. Sugiyama, M. Aikawa, and K. Shimomura, "Lasing characteristics of MOVPE grown 1.5µm GaInAsP LD using directly bonded InP/Si substrate", 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, The University of Tokyo, Tokyo, Japan, 17SP-14, May 17, 2017.
M. Aikawa, T. Nishiyama, Y. Onuki, N. Kamada, X. Han, Gandhi Kallarasan P., K. Uchida, H. Sugiyama, N. Hayasaka, and K. Shimomura, "Bonding temperature dependence of GaInAsP/InP wafer grown on directly bonded InP/Si substrate", 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, The University of Tokyo, Tokyo, Japan, 17SP-13, May 17, 2017.
Gandhi Kallarasan P., T. Nishiyama, N. Kamada, Y. Onuki, and K. Shimomura, "1.5μm laser diode on InP/Si substrate by epitaxial growth using direct bonding method", Conference on Lasers and Electro-Optics 2017, San Jose, CA, USA, JTu5A.108, May 16, 2017.
Y. Onuki, T. Nishiyama, N. Kamada, X. Han, Gandhi Kallarasan P., M. Aikawa, K. Uchida, H. Sugiyama, N. Hayasaka, and K. Shimomura, "Annealing temperature dependence of GaInAsP LD characteristics on InP/Si substrate fabricated by wafer direct bonding", Compound Semiconductor Week 2017, Berlin, Germany, P1.37, May 15, 2017.
N. Kamada, T. Nishiyama, Y. Onuki, X. Han, Gandhi Kallarasan P., M. Aikawa, K. Uchida, H. Sugiyama, N. Hayasaka, and K. Shimomura, "Lasing characteristics and temperature dependence of 1.5µm GaInAsP laser diode grown on directly bonded InP/Si substrate", Compound Semiconductor Week 2017, Berlin, Germany, P1.20, May 15, 2017.
T. Nishiyama, K. Matsumoto, J. Kishikawa, Y. Onuki, N. Kamada, and K. Shimomura, "Lasing characteristics of GaInAsP laser diode grown on directly bonded InP/Si substrate", The 25th International Semiconductor Laser Conference (ISLC2016), Kobe Meriken Park Oriental Hotel, Japan, ThB5, Sept. 15, 2016.
N. Kamada, T. Sukigara, K. Matsumoto, J. Kishikawa, T. Nishiyama, Y. Onuki and K. Shimomura, "S-K Growth of InAs quantum dots on directly-bonded InP/Si substrate using MOVPE", 21st Optoelectonics and Communications Conference (OECC/PS 2016), TOKI Messe Niigata Convention Center, Japan, WA2-76, July 6, 2016.
K. Takano, T. Ogino, K. Asakura, T. Waho, and K. Shimomura, "Optical characteristics of InP/GaInAs core-multishell NWs grown by self-catalytic VLS mode ", 21st Optoelectonics and Communications Conference (OECC/PS 2016), TOKI Messe Niigata Convention Center, Japan, WA2-75, July 6, 2016.
T. Nishiyama, K. Matsumoto, J. Kishikawa, T. Sukigara, Y. Onuki, N. Kamada, T. Kanke, and K. Shimomura, "Low temperature lasing characteristics of GaInAsP double-hetero laser integrated on InP/Si substrate using direct wafer bonding", 21st Optoelectonics and Communications Conference (OECC/PS 2016), TOKI Messe Niigata Convention Center, Japan, TuD1-2, July 5, 2016.
K. Asakura, T. Ogino, K. Takano, T. Waho, and K. Shimomura, "Electrical characteristic of n-InP/ i-GaInAs/ p-InP core-multishell NWs grown by self-catalytic VLS mode", The 2016 Compound Semiconductor Week (CSW2016), Toyama International Conference Center, Toyama, MoD4-5, June 27, 2016.
K. Shimomura, "Self-catalytic InP/GaInAs/InP core-multishell nanowire grown by MOVPE", EMN Meeting on Nanowires, Amsterdam, Netherlands, A20 (Keynote Speech), May 20, 2016.
T. Sukigara, Y. Yamamoto, T. Nishiyama, and K. Shimomura, "Cavity length dependence on lasing characteristics of double-capped QDs laser", 11th Conference on Lasers and Electro-Optics (CLEO-PR 2015), Busan, Korea, 27P-82, Aug. 27, 2015.
T. Ogino, K. Asakura, T. Waho, and K. Shimomura, "PL emission of InP/GaInAs/InP core-multishell NWs grown by self-catalytic VLS mode", 11th Conference on Lasers and Electro-Optics (CLEO-PR 2015), Busan, Korea, 27P-48, Aug. 27, 2015.
K. Matsumoto, Y. Kanaya, J. Kishikawa, and K. Shimomura, "Characteristics of film InP layer and Si substrate bonded interface bonded by wafer direct bonding", 11th Conference on Lasers and Electro-Optics (CLEO-PR 2015), Busan, Korea, 25J3-3, Aug. 25, 2015.
K. Matsumoto, Y. Kanaya, J. Kishikawa, Y. Yamamoto, T. Sukigara, T. Nishiyama, and K. Shimomura, "Epitaxial Grown GaInAsP-InP laser on wafer bonded InP/Si substrate", 42nd International Symposium on Compound Semiconductors (ISCS 2015), Santa Barbara, CA, USA, O6.6, July 1, 2015.
K. Matsumoto, M. Takasu, Y. Kanaya, J. Kishikawa, and K. Shimomura, "GaInAs/InP MQW light-emitting diode fabricated on wafer bonded InP/Quartz substrate", Conference on Lasers and Electro-Optics (CLEO 2015), San Jose, CA, USA, SF2G.5, May 15, 2015.
K. Matsumoto, Y. Kanaya, J. Kishikawa and K. Shimomura, "Epitaxial growth of GaInAsP system on wafer-bonded InP/Si substrate", 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2014), Tokyo, Japan, July 16, 2014.
T. Ogino, M.Yamauchi, Y.Yamamoto, K.Shimomura, and T.Waho, "Growth temperature and pre-heating temperature dependence of InP nanowires grown by self-catalytic VLS mode", 17th International Conference on Metalorganic Vapour Phase Epitaxy (ICMOVPE XVII), Lausanne, Switzerland, Wed-Poster-2-32, July 16, 2014.
K. Matsumoto, Y. Kanaya, J. Kishikawa and K. Shimomura, "Selective MOVPE grown GaInAs/InP MQW demonstrated on directly-bonded InP/SiO2-Si, Glass and Quartz substrate", 17th International Conference on Metalorganic Vapour Phase Epitaxy (ICMOVPE XVII), Lausanne, Switzerland, Wed-Oral-3-6, July 16, 2014.
X. Zhang, K. Matsumoto, Y. Kanaya and K. Shimomura, "First demonstration of directly epitaxial grown QDs LED on wafer bonded InP/Si substrate", 41st International Symposium on Compound Semiconductors (ISCS 2014), Montpellier, France, Tu-D1-3, May 13, 2014.
T. Sukigara, S. Yoshikawa, M. Yamauchi, Y. Yamamoto, and K. Shimomura, "EL spectrum with various core structure in broadband InAs QDs LED", 41st International Symposium on Compound Semiconductors (ISCS 2014), Montpellier, France, P60, May 12, 2014.
K. Matsumoto, X. Zhang, Y. Kanaya, and K. Shimomura, "Selective MOVPE growth of GaInAs/InP MQW on directly-bonded InP/Si substrate," 40th International Symposium on Compound Semiconductors, Kobe, Japan, WeB2-3, May 22, 2013.
S. Yoshikawa, T. Saegusa, Y. Iwane, M. Yamauchi, and K. Shimomura, "Broadband and flat-topped spectrum of InAs/InP QDs arrayed waveguide LED," 40th International Symposium on Compound Semiconductors, Kobe, Japan, TuC1-6, May 21, 2013.
M. Yamauchi, Y. Iwane, S. Yoshikawa, Y. Yamamoto, and K. Shimomura, "Wide energy level control of InAs QDs using double-capping procedure by MOVPE," 25th International Conference on Indium Phosphide and Related Materials, Kobe, Japan, MoPI-5, May 20, 2013.
K. Matsumoto, X. Zhang, Y. Kanaya, and K. Shimomura, "MOVPE growth of InAs/InP QDs on directlybonded InP/Si substrate," 25th International Conference on Indium Phosphide and Related Materials, Kobe, Japan, MoD4-2, May 20, 2013.
K. Matsumoto , T. Makino , K. Kimura and K. Shimomura, "GaInAsP system growth on InP/SiO2-Si and SiO2 templates fabricated by direct wafer bonding", 39th International Symposium on Compound Semiconductors, Santa Barbara, CA, USA, Mo-P.13, Aug. 27, 2012.
S. Murakami , A. Funayama , K. Shimomura and T. Waho, "Au-assisted growth of InAs nanowires on GaAs(111)B,GaAs(100),InP(111)B,InP(100) by MOVPE", 39th International Symposium on Compound Semiconductors, Santa Barbara, CA, USA, Mo-1A.3, Aug. 27, 2012.
Y.Iwane, T.Saegusa, K.Yoshida, M.Yamauchi, S.Yoshikawa, and K.Shimomura, "V/III ratio of Ga0.7In0.3As buffer layer dependence on InAs/InP QDs structure", 16th International Conferenece on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI), Busan, Korea, WeP049, May 23, 2012.
K. Matsumoto, T. Makino, K. Kimura, and K. Shimomura, "GaInAs/InP MOVPE growth on directly bonded InP/Si substrate", 16th International Conferenece on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI), Busan, Korea, MoB2-4, May 21, 2012.
T. Aoyagi, T. Tanimura, S. Yanagi, Y. Yamazaki and K. Shimomura, "Wavelength
demultiplexing and carrier induced switching in variable index arrayed
waveguides", 16th OptoElectronics and Communications Conference (OECC2011),
Kaohsiung, Taiwan 7P3_098, July 2011.
T. Makino, T. Tanimura, S. Yanagi, and K. Shimomura, "Random switching of
wavelength demultiplexed light in variable arrayed waveguide," 16th
OptoElectronics and Communications Conference (OECC2011), Kaohsiung, Taiwan
7P3_097, July 2011.
S. Yanagi, Y. Murakami, T. Aoyagi, Y. Yamazaki and K. Shimomura "Switching
characteristics in variable index arrayed waveguides using triangular heater",
16th OptoElectronics and Communications Conference (OECC2011), Kaohsiung, Taiwan
7E2_3, July 2011.
M. Hirooka, F. Kawashima, Y.Iwane, T.Saegusa, and K. Shimomura, "Strain control
using GaxIn1-xAs second cap layer during double-cap procedure in InAs / InP QDs
structure", 23rd International Conference on Indium Phosphide and Related
Materials (IPRM 2011), Berlin, Germany, P19, May 2011.
Y. Iwane, F. Kawashima, M. Hirooka, T. Saegusa, and K. Shimomura, "InAs/InP QDs
grown by selective MOVPE growth using double-cap procedure for broadband LED
improved p-cladding layer", 38th International Symposium on Compound
Semiconductors (ISCS 2011), Berlin, Germany, P3.22, May 2011.
F. Kawashima, R. Kobie, Y. Suzuki, and K. Shimomura, "Selective MOVPE growth of
InAs QDs using double-cap procedure," The 16th International Conference on
Crystal Growth (ICCG-16), Beijing, China, HJ1 (Invited), Aug. 2010.
Y.Murakami, T.Sugio, T.Tanimura, T.Makino, and K.Shimomura, "Wavelength
switching in variable index arrayed waveguides using Ti/Au thin film heater",
15th OptoElectronics and Communications Conference (OECC2010), Sapporo, Japan
8E1-5, July 2010.
T.Tanimura, T.Sugio, Y.Murakami, T.Aoyagi, and K.Shimomura, "Numerical
calculation of wavelength switching in index-varied array waveguide", 15th
OptoElectronics and Communications Conference (OECC2010), Sapporo, Japan 7P-64,
July 2010.
T. Sugio, T. Aoyagi, T. Tanimura, Y. Murakami and K. Shimomura, "Switching
characteristics in variable refractive-index waveguide array by carrier
injection", 22nd Indium Phosphide and Related Materials conference (IPRM 2010),
Takamatsu, Japan, WeP21, June 2010.
K. Shimomura, Y. Suzuki, Y. Saito, and F. Kawashima, "InAs/InP QDs broadband LED
using selective MOVPE growth and double-cap procedure," 22nd Indium Phosphide
and Related Materials conference (IPRM 2010), Takamatsu, Japan, TuA2-3
(Invited), June 2010.
H. Iwasaki, T. Sugio, T. Tanimura, K. Takeuchi, and K. Shimomura, "Waveguide
design of variable refractive-index waveguide array demultiplexer and wavelength
selective switch", The 14th OptoElectronics and Communications Conference (OECC
2009), Hong Kong, ThLP31, July 2009.
Y. Murakami, Y. Shimizu, T. Sugio, and K. Shimomura, "Switching characteristics
in variable index arrayed waveguide wavelength selective switch", The 14th
OptoElectronics and Communications Conference (OECC 2009), Hong Kong, ThA3, July
2009.
Y. Saito, M. Akaishi, T. Inoue, Y. Suzuki, F. Kawashima, and K. Shimomura, "InAs
QDs broadband LED using double-cap procedure and selective MOVPE growth," The
14th OptoElectronics and Communications Conference (OECC 2009), Hong Kong, WI1,
July 2009.
Y. Shimizu, H. Iwasaki, T. Sugio, Y. Murakami and K. Shimomura, "Wavelength
Selective Switch using GaInAs/InP MQW Variable Index Arrayed Waveguides," The
Conference on Lasers and Electro-Optics (CLEO 2009), Baltimore, USA, JTuD48,
June 2009.
T. Sugio, M. Akaishi, and K. Shimomura, "Carrier induced refractive index change
in InAs quantum dots on InP (001) substrates," 2008 International
Nano-Optoelectronics Workshop (iNOW 2008), Lake Saiko, Japan, Poster Session 4,
P28, Aug. 2008.
H. Iwasaki, Y. Shimizu, and K. Shimomura, "Switching characteristics in
wavelength switch using selectively grown waveguide array by thermooptic
effect," 2008 International Nano-Optoelectronics Workshop (iNOW 2008), Lake
Saiko, Japan, Poster Session 3, P30, Aug. 2008.
M. Akaishi, Y. Saito, and K. Shimomura, "Dependency of InAs QDs using GaxIn1-xAs
second cap layer in the Double-cap procedure," 2008 International
Nano-Optoelectronics Workshop (iNOW 2008), Lake Saiko, Japan, Poster Session 3,
P14, Aug. 2008.
K. Shimomura, "Selective MOVPE grown semiconductor optical waveguide array and
its application for optical devices," 2008 International Nano-Optoelectronics
Workshop (iNOW 2008), Lake Saiko, Japan, Session Sa1 (Invited), Aug. 2008.
Y. Saito, T. Okawa, M. Akaishi, and K. Shimomura, "Wideband wavelength electro
luminescence from InAs/InP QDs using double-cap procedure by MOVPE selective
area growth," 14th International Conference on Metal Organic Vapor Phase
Epitaxy, Metz, France, Th-B1.2, June 2008.
M. Akaishi, T.Okawa, Y.Saito, and K. Shimomura, "InAs/InP QDs using GaxIn1-xAs
cap layer in double-cap procedure by MOVPE selective area growth," 14th
International Conference on Metal Organic Vapor Phase Epitaxy, Metz, France,
Tu-P.1, June 2008.