We are studying Photonic Integrated Circuits.　　　▷Japanese

Policy

The explosively increasing demand for bandwidth in telecommunications and data-communication networks as well as the migration of major telecommunication markets to an open and competitive environment have created a need for reliable, flexible high-capacity networks. Wavelength division multiplexing (WDM) is put to practical use by the technological progress such as the optical amplifier, laser, and multi/demultiplexer. The WDM network is paid to attention as a technology that not only enables a great increase of the transmission capacity but also enables to make the all-optical network including the node function. In our laboratory, research is being done about the functional device which used three characteristics of "time" "space" "wavelength" for the optical communication system of the next generation and the optical information processing system.

NEWSNEWS

Mar. 1, 2024

Paper
G.K. Perlyanayagam et.al., "Gain coefficient comparison between Silicon and InP laser diode substrate", Physica Status Solidi A, 2300677, 2024. https://doi.org/10.1002/pssa.202300677

May 31, 2023

Conference
L. Zhao et.al., Compound Semiconductor Week 2023 (CSW 2023), Jeju, Korea

Oct. 18, 2022

Conference
R. Yada et.al., 28th International Semiconductor Laser Conference, Kunibiki Messe, Japan

Aug. 3, 2022

Conference
L. Zhao et.al., Conference on Lasers and Electro-Optics PacificRim 2022, Sapporo, Japan

June, 2022

Paper
G.K. Perlyanayagam et.al., "Numerical analysis and lasing characteristics of GaInAsP double heterostructure lasers on InP/Si substrate", J. Electronic Materials, vol.51, pp. 5110-5119, 2022. https://doi.org/10.1007/s11664-022-09737-x

Oct. 13, 2021

Conference
X. Han et.al., 27th International Semiconductor Laser Conference, Potsdam, Germany

July 4, 2021

Conference
X. Han et.al., 26th OptoElectronics and Communications Conference, Hong Kong, Chaina

July 4, 2021

Conference
K. Kuwahara et.al., 26th OptoElectronics and Communications Conference, Hong Kong, Chaina

Mar., 2021

Paper
X. Han et.al., "Characteristics of multi-quantum-well laser diodes with surface electrode structure directly bonded to InP template on SiO2/Si substrate", Physica Status Solidi A, 2000767, 2021. https://doi.org/10.1002/pssa.202000767

Oct. 7, 2020

Conference
T. Shirai et.al., 25th OptoElectronics and Communications Conference, Taipei, Taiwan

Oct. 7, 2020

Conference
K. Shibukawa et.al., 25th OptoElectronics and Communications Conference, Taipei, Taiwan

Oct. 7, 2020

Conference
K. Tsushima et.al., 25th OptoElectronics and Communications Conference, Taipei, Taiwan

Sept. 24, 2019

Conference
R. Ishihara et.al., Nanowire Week 2019, Pisa, Tuscany, Italy

Sept. 24, 2019

Conference
K. Kuwahara et.al., Nanowire Week 2019, Pisa, Tuscany, Italy

July 10, 2019

Conference
T. Ishizaki et.al., 24th OptoElectronics and Communications Conference (OECC/PSC 2019), Fukuoka International Congress Center, Fukuoka, Japan

July 10, 2019

Conference
T. Shirai et.al., 24th OptoElectronics and Communications Conference (OECC/PSC 2019), Fukuoka International Congress Center, Fukuoka, Japan

July 10, 2019

Conference
K. Tsushima et.al., 24th OptoElectronics and Communications Conference (OECC/PSC 2019), Fukuoka International Congress Center, Fukuoka, Japan

Jan, 2019

Paper
S. Yoshimura et.al., "Fabrication of star-shaped InP/GaInAs core-multishell nanowires by self-catalytic VLS mode", J. Crystal Growth, vol. 509, pp.66-70, Mar. 1, 2019. https://doi.org/10.1016/j.jcrysgro.2018.12.015

Dec, 2018

Paper
H. Sugiyama et.al., "MOVPE grown GaInAsP/GaInAsP SCH-MQW laser diode on directly- bonded InP/Si substrate", J. Crystal Growth, vol. 507, pp. 93-97, Feb. 1, 2019. https://doi.org/10.1016/j.jcrysgro.2018.10.024

Sept. 18, 2018

Conference
M. Aikawa, 26th International Semiconductor Laser Conference (ISLC2018), Santa Fe, New Mexico, USA

Aug. 1, 2018

Conference
H. Yada, The 13th Pacific Rim Conference on Lasers and Electro-Optics (CLEO-PR 2018), Hong Kong Convention and Exhibition Centre

June 19, 2018

Conference
P. Gandhi Kallarasan (Invited Talk), EMN Vienna Meeting 2018, Vienna, Austria

June 5, 2018

Conference
S. Yoshimura, K. Sugiyama, K. Uchida, K. Ishida, 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara Kasugano International Forum, Nara, Japan

May 15, 2018

Conference
P. Gandhi Kallarasan, Conference on Lasers and Electro-Optics 2018, San Jose, CA, USA

Apr. 25, 2018

Conference
K. Shimomura (Invited Talk), SPIE Photonics Europe 2018, Strasbourg Convention & Exhibition Centre, Strasbourg, France

Feb, 2018

Paper
M. Aikawa et. al., "Bonding temperature dependence of GaInAsP/InP laser diode grown on hydrophilically directly bonded InP/Si substrate", Jpn. J. Appl. Phys., vol. 57, no. 2S1, 02BB04, pp.02BB04-1-6, Feb. 2018.

Aug. 3, 2017

Conference
H. Sugiyama, K. Uchida, The 22nd OptoElectronics and Communications Conference, Sands Expo and Convention Centre, Singapore

May 29,30, 2017

Conference
K. Takano, S. Yoshimura, 10th Nanowire Growth Workshop, 9th NANOWIRES, Lund, Sweden

May 19, 2017

Our research is shown in University Research Report vol.58 at U.S.-Japan Research Institute.Sophia University, Kazuhiko Shimomura

March, 2017

The paper published from JJAP has been selected as Highlights of 2016 (Photonics, quantum electronics, optics, and spectroscopy).
K. Matsumoto, J. Kishikawa, T. Nishiyama, Y. Onuki, and K. Shimomura, Jpn. J. Appl. Phys., vol.55, no.11, p.112201, 2016. http://doi.org/10.7567/JJAP.55.112201

May 17, 2017

Conference
K.Shimomura (Invited Talk), M. Aikawa, N. Hayasaka, 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, The University of Tokyo, Tokyo, Japan

May 16, 2017

Conference
Gandhi Kallarasan, Conference on Lasers and Electro-Optics 2017, San Jose, CA, USA

May 15, 2017

Conference
Y. Onuki, N.Kamada, Compound Semiconductor Week 2017, Berlin, Germany

Oct. 24, 2016

Article
Article about integration of InP devices on silicon platform has appeared in Semiconductor Today.
Semiconductor Today

Sept. 2016

Paper
K. Matsumoto et. al., Jpn. J. Appl. Phys., vol.55, no.11, p.112201, 2016. http://doi.org/10.7567/JJAP.55.112201

Sept. 15, 2016

Conference
The 25th International Semiconductor Laser Conference (ISLC2016), Kobe Meriken Park Oriental Hotel, Japan

July 5,9, 2016

Conference
T. Nishiyama, N. Kamada, K. Takano, 21st Optoelectronics and Communications Conference (OECC/PS 2016), Toki Messe Niigata Convention Center, Japan

June 27, 2016

Conference
K. Asakura, The 2016 Compound Semiconductor Week (CSW2016), Toyama International Conference Center, Toyama, Japan

June 2016

Article
Article about laser diode on InP/Si substrate has appeared in Semiconductor Today.
Semiconductor Today

May 2016

Conference
K. Shimomura, EMN Meeting on Nanowires, Amsterdam, Netherlands (Keynote Speech)

May 2016

Paper
K. Matsumoto et. al., Applied Physics Express, 9, 062701, 2016. http://doi.org/10.7567/APEX.9.062701

Mar. 2016

Paper
T. Ogino et. al., Jpn. J. Appl. Phys., vol.55, no.3, 031201, 2016.

Aug. 2015

Conference
K. Matsumoto, T. Ogino, T. Sukigara, 11th Conference on Lasers and Electro-Optics (CLEO-PR 2015), Busan, Korea

July 2015

Conference
K. Matsumoto, International Symposium on Compound Semiconductors (ISCS 2015), Santa Barbara, CA, USA

May 2015

Conference
K. Matsumoto, Conference on Lasers and Electro-Optics (CLEO 2015), San Jose, CA, USA

Jan. 2015

Paper
K. Matsumoto et.al., Jpn. J. Appl. Phys., vol. 54, 030208, Jan. 2015.
T. Ogino et. al., J. Crystal Growth, vol. 414, pp.161-166, Jan. 2015.