We are studying Photonic Integrated Circuits.　　　▷Japanese

The CPU is made from LSI, and the large area of LSI is occupied the interconnection between transistor. Because of the long interconnection length, the transit time of signal become slow and the consumption power in this interconnection become large. The idea of optical interconnection is the technology replace this electrical interconnection with optical waveguide interconnection. As one of the device for this optical interconnection, we have proposed the optically controlled FET. This device is the integrated structure of light absorption region and FET region, and both region are connected by direct wafer bonding technique. The FET region was used Si-MOSFET, GaAs/AlGaAs HEMT, GaAs MESFET, and light absorption region was used GaInAs bulk or GaInAs/InP MQW structure. In the fabricated optically controlled MOSFET, we have obtained 1850A/W optical to electrical conversion efficiency (responsivity).