F. Kawashima, R. Kobie, Y. Suzuki, and K. Shimomura, "Selective MOVPE growth of InAs QDs using double-cap procedure," J. Crystal Growth, vol.318, pp.1109-1112, 2011.
Y. Saito, T. Okawa, M. Akaishi, and K. Shimomura, "Wideband wavelength electroluminescence from InAs/InP QDs using double-cap procedure by MOVPE selective area growth," J. Crystal Growth, vol.310, issue 23, pp.5073-5076, Nov. 2008.
M. Akaishi, T. Okawa, Y. Saito, and K. Shimomura, "InAs/InP QDs with GaxIn1-xAs cap layer by a double-cap procedure using MOVPE selective area growth," J. Crystal Growth, vol.310, issue 23, pp.5069-5072, Nov. 2008.
M. Akaishi, T. Okawa, Y. Saito and K. Shimomura, "Wide emission wavelength InAs/InP quantum dots grown by double-capped procedure using MOVPE selective area growth," IEEE Journal on Selected Topics in Quantum Electronics, vol.14, no.4, pp.1197-1203, Aug. 2008.
Y. Shimizu, S. Kawabe, H. Iwasaki, T. Sugio, and K. Shimomura, "Wavelength switching using GaInAs/InP MQW variable refractive-index arrayed waveguides by thermo-optic effect," IEICE Trans. Electron., vol.E91-C, no.7, pp.1110-1116, July 2008.
T. Yoshioka, Y. Kawakita, A. Kawai, T. Okawa and K.Shimomura, "Simple estimation
of strain distribution in narrow-stripe waveguide array fabricated by selective
MOVPE",J. Crystal Growth, vol.298, pp.676-681, Jan. 2007.
Y. Yamauchi, S. Okamoto, T. Okawa, Y. Kawakita, J. Yoshida and K. Shimomura,
"Controlling emission wavelength of double-capped InAs quantum dots by selective
MOVPE employing stripe mask array," J. Crystal Growth, vol.298, pp.578-581, Jan.
2007.
T. Okawa, Y. Yamauchi, J. Yamamoto, J. Yoshida and K. Shimomura, "Growth
temperature and InAs supply dependences of InAs quantum dots on InP (0 0 1)
substrate ", J. Crystal Growth, vol.298, pp.562-566, Jan. 2007.
Y.Kawakita, S.Shimotaya, D.Machida and K.Shimomura, "Wavelength demultiplexing
and optical deflector in variable refractive-index waveguide array based on
selectively grown GaInAs/InP MQW structure," IEICE Trans. Electron., vol.E88-C,
no.5, pp.1013-1019, May 2005.
K.Shimomura and Y.Kawakita, "Wavelength selective switch using arrayed
waveguides with linearly varing refractive index distribution," Photonics Based
on Wavelength Integration and Manipulation, IPAP Books 2, pp.341-354, Feb. 2005.
Y.Kawakita, S.Shimotaya, A.Kawai, D.Machida, and K.Shimomura, "Wavelength
demultiplexer using GaInAs-InP MQW-based variable refractive-index arrayed
waveguides fabricated by selective MOVPE", IEEE Journal on Selected Topics in
Quantum Electronics, vol.11, no.1, pp.211-216, Jan. 2005.
Y.Kawakita, T.Saitoh, A.Kawai, S.Shimotaya, and K.Shimomura, "Arrayed waveguides
with linearly varying refractive index distribution and its application for
wavelength demultiplexer", J. Crystal Growth,vol.272, pp. 582-587, Dec. 2004.
Y.Kawakita, S.Shimotaya, D.Machida and K.Shimomura, "Four-channel wavelength
demultiplexing with 25-nm spacing in variable refractive-index arrayed
waveguides ", Electron. Lett.,vol.40, no.14, pp.900-901, July 2004.
Y.Kawakita, T.Saitoh, S.Shimotaya, and K.Shimomura, "A novel straight arrayed
waveguide grating with linearly varying refractive index distribution," IEEE
Photon. Tech. Lett., vol.16, no.1, pp.144-146, Jan. 2004.
Y.Moriguchi, T.Kihara, and K.Shimomura, "High growth enhancement factor in
arrayed waveguides by MOVPE selective area growth," J. Crystal Growth, vol. 248,
pp.395-399, 2003.
K.Miki, Y.Kawakita, T.Kihara, and K.Shimomura, "Numerical analysis of 1.55
um wavelength optical deflector using arrayed waveguide with staircase like
refractive index distribution," Electronics and Communications in Japan, Part2,
vol.86, no.4, pp.1-9, Apr. 2003.
T.Kihara, Y.Nitta, H.Suda, K.Miki, and K.Shimomura, "Wavelength control of
arrayed waveguide by MOVPE selective area growth," J. Crystal Growth, vol.V221,
pp.196-200, Dec. 2000.
R.Satrusajang, Y.Nitta, and K.Shimomura, "Analysis and fabrication of
GaInAs/InP MQW graded refractive index-type optical deflector," Electronics and
Communications in Japan, vol.82, no.12, pp.21-29, 1999.
K.Shimomura and T.Yamagata, "Novel integrated photodetector on Si LSI
circuits - Optically Controlled MOSFET," IEEE Journal on Selected Topics in
Quantum Electronics, vol.5, no.2, pp.178-183, Maｒｃｈ/April 1999.
Y.Nitta, T.Yamagata, and K.Shimomura, "Gate length dependence of optical
characteristics in optically controlled MOSFET," Japan. J. Appl. Phys., vol.38,
no.4B, pp.2580-2585, Apr. 1999.
T.Sakai and K.Shimomura, "High On/Off ratio and responsivity in integrated
optically controlled HEMT," IEEE Photon. Tech. Lett., vol.10, no.3, pp.418-420,
Mar. 1998.
T.Yamagata and K.Shimomura, "High responsivity in integrated optically
controlled Metal-Oxide Semiconductor field-effect transistor using directly
bonded SiO2-InP," IEEE Photon. Tech. Lett., vol.9, no.8, pp.1143-1145, Aug.
1997.
T.Sakai and K.Shimomura, "High responsivity in an optically controlled
field-effect transistor using the direct wafer bonding technique," Japan. J.
Appl. Phys., vol.36, no.3B, pp.1481-1486, Mar. 1997.
T.Yamagata and K.Shimomura, "Optically controlled Metal-Oxide Semiconductor
Field-Effect Transistor operated by long-wavelength light," Japan. J. Appl.
Phys., vol.35, no.12A, pp.L1589-L1592, Dec. 1996.
T.Sakai and K.Shimomura, "Bonding temperature dependence of optically
controlled field-effect transistor fabricated by direct wafer bonding
technique," Japan. J. Appl. Phys., vol.35, no.7A, pp.L835-L837, July 1996.
Y.Shimizu and K.Shimomura, "Current modulation characteristics in
optically-controlled field-effect transistor," IEEE Photon. Tech. Lett., vol.6,
no.11, pp.1338-1340, Nov. 1994.
Y.Shimizu and K.Shimomura, "Numerical analysis of current modulation in
optically-controlled field-effect transistor," Japan. J. Appl. Phys., vol.33,
no.1B, pp.L109-L112, Jan. 1994
K.Shimomura and S.Arai, "Semiconductor waveguide optical switches and
modulators," Fiber and Integrated Optics, Taylor & Francis, vol.13, no.1,
pp.65-100, Jan. 1994
K.Shimomura, "Proposal of field-effect type photodetector using
field-screening effect in the absorption of light," Japan. J. Appl. Phys.,
vol.31, no.12B, pp.L1757-L1759, Dec. 1992.
解説
K.Shimomura, "Optically controlled field effect transistor," Recent Res.
Devel. In Applied Phys., vol.2, pp.33-42, 1999.
T. Aoyagi, T. Tanimura, S. Yanagi, Y. Yamazaki and K. Shimomura, "Wavelength
demultiplexing and carrier induced switching in variable index arrayed
waveguides", 16th OptoElectronics and Communications Conference (OECC2011),
Kaohsiung, Taiwan 7P3_098, July 2011.
T. Makino, T. Tanimura, S. Yanagi, and K. Shimomura, "Random switching of
wavelength demultiplexed light in variable arrayed waveguide," 16th
OptoElectronics and Communications Conference (OECC2011), Kaohsiung, Taiwan
7P3_097, July 2011.
S. Yanagi, Y. Murakami, T. Aoyagi, Y. Yamazaki and K. Shimomura "Switching
characteristics in variable index arrayed waveguides using triangular heater",
16th OptoElectronics and Communications Conference (OECC2011), Kaohsiung, Taiwan
7E2_3, July 2011.
M. Hirooka, F. Kawashima, Y.Iwane, T.Saegusa, and K. Shimomura, "Strain control
using GaxIn1-xAs second cap layer during double-cap procedure in InAs / InP QDs
structure", 23rd International Conference on Indium Phosphide and Related
Materials (IPRM 2011), Berlin, Germany, P19, May 2011.
Y. Iwane, F. Kawashima, M. Hirooka, T. Saegusa, and K. Shimomura, "InAs/InP QDs
grown by selective MOVPE growth using double-cap procedure for broadband LED
improved p-cladding layer", 38th International Symposium on Compound
Semiconductors (ISCS 2011), Berlin, Germany, P3.22, May 2011.
F. Kawashima, R. Kobie, Y. Suzuki, and K. Shimomura, "Selective MOVPE growth of
InAs QDs using double-cap procedure," The 16th International Conference on
Crystal Growth (ICCG-16), Beijing, China, HJ1 (Invited), Aug. 2010.
Y.Murakami, T.Sugio, T.Tanimura, T.Makino, and K.Shimomura, "Wavelength
switching in variable index arrayed waveguides using Ti/Au thin film heater",
15th OptoElectronics and Communications Conference (OECC2010), Sapporo, Japan
8E1-5, July 2010.
T.Tanimura, T.Sugio, Y.Murakami, T.Aoyagi, and K.Shimomura, "Numerical
calculation of wavelength switching in index-varied array waveguide", 15th
OptoElectronics and Communications Conference (OECC2010), Sapporo, Japan 7P-64,
July 2010.
T. Sugio, T. Aoyagi, T. Tanimura, Y. Murakami and K. Shimomura, "Switching
characteristics in variable refractive-index waveguide array by carrier
injection", 22nd Indium Phosphide and Related Materials conference (IPRM 2010),
Takamatsu, Japan, WeP21, June 2010.
K. Shimomura, Y. Suzuki, Y. Saito, and F. Kawashima, "InAs/InP QDs broadband LED
using selective MOVPE growth and double-cap procedure," 22nd Indium Phosphide
and Related Materials conference (IPRM 2010), Takamatsu, Japan, TuA2-3
(Invited), June 2010.
H. Iwasaki, T. Sugio, T. Tanimura, K. Takeuchi, and K. Shimomura, "Waveguide
design of variable refractive-index waveguide array demultiplexer and wavelength
selective switch", The 14th OptoElectronics and Communications Conference (OECC
2009), Hong Kong, ThLP31, July 2009.
Y. Murakami, Y. Shimizu, T. Sugio, and K. Shimomura, "Switching characteristics
in variable index arrayed waveguide wavelength selective switch", The 14th
OptoElectronics and Communications Conference (OECC 2009), Hong Kong, ThA3, July
2009.
Y. Saito, M. Akaishi, T. Inoue, Y. Suzuki, F. Kawashima, and K. Shimomura, "InAs
QDs broadband LED using double-cap procedure and selective MOVPE growth," The
14th OptoElectronics and Communications Conference (OECC 2009), Hong Kong, WI1,
July 2009.
Y. Shimizu, H. Iwasaki, T. Sugio, Y. Murakami and K. Shimomura, "Wavelength
Selective Switch using GaInAs/InP MQW Variable Index Arrayed Waveguides," The
Conference on Lasers and Electro-Optics (CLEO 2009), Baltimore, USA, JTuD48,
June 2009.
T. Sugio, M. Akaishi, and K. Shimomura, "Carrier induced refractive index change
in InAs quantum dots on InP (001) substrates," 2008 International
Nano-Optoelectronics Workshop (iNOW 2008), Lake Saiko, Japan, Poster Session 4,
P28, Aug. 2008.
H. Iwasaki, Y. Shimizu, and K. Shimomura, "Switching characteristics in
wavelength switch using selectively grown waveguide array by thermooptic
effect," 2008 International Nano-Optoelectronics Workshop (iNOW 2008), Lake
Saiko, Japan, Poster Session 3, P30, Aug. 2008.
M. Akaishi, Y. Saito, and K. Shimomura, "Dependency of InAs QDs using GaxIn1-xAs
second cap layer in the Double-cap procedure," 2008 International
Nano-Optoelectronics Workshop (iNOW 2008), Lake Saiko, Japan, Poster Session 3,
P14, Aug. 2008.
K. Shimomura, "Selective MOVPE grown semiconductor optical waveguide array and
its application for optical devices," 2008 International Nano-Optoelectronics
Workshop (iNOW 2008), Lake Saiko, Japan, Session Sa1 (Invited), Aug. 2008.
Y. Saito, T. Okawa, M. Akaishi, and K. Shimomura, "Wideband wavelength electro
luminescence from InAs/InP QDs using double-cap procedure by MOVPE selective
area growth," 14th International Conference on Metal Organic Vapor Phase
Epitaxy, Metz, France, Th-B1.2, June 2008.
M. Akaishi, T.Okawa, Y.Saito, and K. Shimomura, "InAs/InP QDs using GaxIn1-xAs
cap layer in double-cap procedure by MOVPE selective area growth," 14th
International Conference on Metal Organic Vapor Phase Epitaxy, Metz, France,
Tu-P.1, June 2008.
Y. Shimizu, M. Mogi, T. Yoshioka, and K. Shimomura, "Wavelength switching using
GaInAs/InP MQW variable index arrayed waveguides by thermo-optic effect," 12th
Optoelectronics and Communications Conference (OECC/IOOC 2007), Yokohama, Japan,
11D1-2, July 2007.
M. Akaishi, Y. Yamauchi, T. Okawa, Y. Saito, J. Yoshida, K. Shimomura, "Wide
bandgap wavelength control of InAs/InP quantum dots array waveguides by
selective MOVPE", 19th International Conference on Indium Phosphide and Related
Materials, Matsue, Japan, PA24, May 2007.
T.Yoshioka, Y.Kawakita, D.Machida, and K.Shimomura, "Improvements of crosstalk
in variable-refractive index waveguide array demultiplexer," Conference on
Lasers and Electro-Optics (CLEO 2006), Long Beach, California, USA, CWK4, May
2006.
T.Yoshioka, Y.Kawakita, T.Okawa, A.Kawai and K.Shimomura, "Simple estimation of
strain distribution in narrow stripe waveguide array fabricated by selective
MOVPE," 13th International Conference on Metal Organic Vapor Phase Epitaxy,
Miyazaki, Japan, We-P.55, May 2006.
Y.Yamauchi, S.Okamoto, T.Okawa, Y.Kawakita, J.Yoshida and K.Shimomura,
"Controlling emission wavelength of double-capped InAs quantum dots by selective
MOVPE employing stripe mask array," 13th International Conference on Metal
Organic Vapor Phase Epitaxy, Miyazaki, Japan, Tu-P.90, May 2006.
T.Okawa, Y.Yamauchi, J.Yamamoto, J.Yoshida and K.Shimomura, "Size fluctuation
dependence on growth temperature and supply of InAs quantum dots on InP(001)
substrates," 13th International Conference on Metal Organic Vapor Phase Epitaxy,
Miyazaki, Japan, Tu-P.86, May 2006.
Y.Yamauchi, Y.Kawakita, S.Okamoto, J.Yoshida, and K.Shimomura, "Size and Density
Control of InAs Quantum Dots by Selective MOVPE Growth Employing Stripe Mask
Array and Composition-Varied GaInAs Layer," LEOS 2005, Sydney Australia, WT3,
Oct. 2005.
S.Okamoto, Y.Kawakita, K.Hirose, Y.Yamauchi, and K.Shimomura, "Size and Density
Control of InAs Quantum Dots by Selective MOVPE Growth Using Narrow Stripe Mask
Array", IQEC and CLEO-PR 2005, Tokyo Japan, JWAB3-P3, July 2005.
Y.Kawakita, S.Shimotaya, D.Machida, and K.Shimomura, "Optical deflector
using arrayed waveguides fabricated by MOVPE selective area growth ", 9th
OptoElectronics and Communications Conference / 3rd Conference on Optical
Internet (OECC/COIN2004), Kanagawa, Japan, 13P-118, July 2004.
H.Fukuda, T.Yuuki, T.Kurihashi, Y.Iwabuchi, and K.Shimomura, "Wavelength
demultiplexing characteristic in Two-mode interference optical device by MOVPE
selective area growth", 9th OptoElectronics and Communications Conference / 3rd
Conference on Optical Internet (OECC/COIN2004), Kanagawa, Japan, 13P-117, July
2004.
Y.Kawakita, S.Shimotaya, D.Machida, and K.Shimomura, "4-channel wavelength
demultiplexing in GaInAs/InP MQW-based arrayed waveguides", 9th OptoElectronics
and Communications Conference / 3rd Conference on Optical Internet
(OECC/COIN2004), Kanagawa, Japan, 14F1-4, July 2004.
Y.Kawakita, T.Saitoh, A.Kawai, S.Shimotaya, and K.Shimomura, "Arrayed
waveguides with linearly varying refractive index distribution and its
application for wavelength demultiplexer", 2004 International Conference on
Indium Phosphide and Related Materials, Kagoshima, Japan, WA2-5, June 2004.
K.Hirose , S.Okamoto, J.Yamamoto, T.Shioda, and K.Shimomura, "Flat surface
growth conditions of InP capping layer over InAs Quantum Dots on (001)InP
Substrate", 12th International Conference on Metal Organic Vapor Phase Epitaxy,
Lahaina, Maui, Hawaii, Quantum Structures Poster Session (11), June 2004.
Y.Kawakita, A.Kawai, S.Shimotaya, and K.Shimomura, "Selective MOVPE growth
of tilted arrayed waveguides from [011] direction," 12th International
Conference on Metal Organic Vapor Phase Epitaxy, Lahaina, Maui, Hawaii, Growth
Issues Poster Session (30), June 2004.
Y.Kawakita, S.Shimotaya, T.Saitoh, and K.Shimomura, "Wavelength
demultiplexer using arrayed waveguides with linearly varying refractive index
distribution," 2004 Conference on Lasers & Electro-Optics, San Francisco,
California, USA, CThT8, May 2004.
Y.Kawakita, Y.Moriguchi, and K.Shimomura, "Wavelength demultiplexing in
straight arrayed waveguides with staircase-like refractive index distribution,"
Conference on Lasers and Electro-Optics (CLEO 2003), Baltimore, Maryland, USA,
CWA44, June 2003.
R.Fukuoka, K.Yamazaki and K.Shimomura, "Greatly size reduction of InAs
Quantum Dots on (001)InP substrate," 11th International Conference on
Metalorganic Vapour Phase Epitaxy (ICMOVPE XI), Berlin, Germany, Thu-P12, June
2002.
Y.Moriguchi, T.Kihara, and K.Shimomura, "High growth enhancement factor in
arrayed waveguides by MOVPE selective area growth," 11th International
Conference on Metalorganic Vapour Phase Epitaxy (ICMOVPE XI), Berlin, Germany,
Wed-F3, June 2002.
Y.Kawakita and K.Shimomura, "A novel wavelength dividing and switching
device using arrayed waveguide," Conference on Lasers and Electro-Optics (CLEO
2002), Long Beach, California, USA, CMV2, May 2002.
Y.Kawakita, T.Kihara, K.Miki, and K.Shimomura, "Proposal of Arrayed
Waveguides Optical Deflector and Wavelength Divide Optical Switch ," SPIE's
International Symposium Optoelectronics 2002, San Jose, California, USA,
4640-54, Jan. 2002.
K.Yamazaki, R.Fukuoka, and K.Shimomura, "Fabrication of quantum dots for
wavelength converter using four-wave mixing", 2001 International Conference on
Solid State Devices and Materials, E-3-5, Sept. 2001.
Y.Nitta, T.Kihara, H.Suda, K.Miki, and K.Shimomura, "Wavelength control of
arrayed waveguide by MOVPE selective area growth," The Tenth International
Conference on Metalorganic Vapor Phase Epitaxy, Sapporo, Japan, Tu-P11, June
2000.
R.Satrusajang, H.Yamamoto, and K.Shimomura, "Novel waveguide GaInAs/InP MQW
optical deflector using comb like electrodes," 1999 International Conference on
Solid State Devices and Materials, Tokyo, Japan, E-6-2, Sept. 1999.
Y.Nitta, T.Yamagata, Y.Takano and K.Shimomura, "1850A/W responsivity in
optically controlled MOSFET by illumination of 1.5um wavelength light,"
Proceedings of SPIE, vol.3630, pp.212-221, 1999.
R.Satrusajang, Y.Nitta, and K.Shimomura, "Steering characteristics of
GaInAs/InP MQW comb type waveguide optical deflector," Proceedings of SPIE,
vol.3620, pp.356-365, 1999.
R.Satrusajang, Y.Nitta, and K.Shimomura, "Steering characteristics of
GaInAs/InP MQW comb type waveguide optical deflector," SPIE's International
Symposium Optoelectronics '99, San Jose, California, USA, 3630-25, Jan. 1999.
Y.Nitta, T.Yamagata, Y.Takano and K.Shimomura, "1850A/W responsivity in
optically controlled MOSFET by illumination of 1.5um wavelength light," SPIE's
International Symposium Optoelectronics '99, San Jose, California, USA, 3620-45,
Jan. 1999.
R.Fukuoka, K.Yamazaki and K.Shimomura, "Greatly size reduction of InAs
Quantum Dots on (001)InP substrate," 11th International Conference on
Metalorganic Vapour Phase Epitaxy (ICMOVPE XI), Berlin, Germany, Thu-P12, June
2002.
Y.Moriguchi, T.Kihara, and K.Shimomura, "High growth enhancement factor in
arrayed waveguides by MOVPE selective area growth," 11th International
Conference on Metalorganic Vapour Phase Epitaxy (ICMOVPE XI), Berlin, Germany,
Wed-F3, June 2002.
Y.Kawakita and K.Shimomura, "A novel wavelength dividing and switching
device using arrayed waveguide," Conference on Lasers and Electro-Optics (CLEO
2002), Long Beach, California, USA, CMV2, May 2002.
Y.Kawakita, T.Kihara, K.Miki, and K.Shimomura, "Proposal of Arrayed
Waveguides Optical Deflector and Wavelength Divide Optical Switch ," SPIE's
International Symposium Optoelectronics 2002, San Jose, California, USA,
4640-54, Jan. 2002.
K.Yamazaki, R.Fukuoka, and K.Shimomura, "Fabrication of quantum dots for
wavelength converter using four-wave mixing", 2001 International Conference on
Solid State Devices and Materials, E-3-5, Sept. 2001.
Y.Nitta, T.Kihara, H.Suda, K.Miki, and K.Shimomura, "Wavelength control of
arrayed waveguide by MOVPE selective area growth," The Tenth International
Conference on Metalorganic Vapor Phase Epitaxy, Sapporo, Japan, Tu-P11, June
2000.
R.Satrusajang, H.Yamamoto, and K.Shimomura, "Novel waveguide GaInAs/InP MQW
optical deflector using comb like electrodes," 1999 International Conference on
Solid State Devices and Materials, Tokyo, Japan, E-6-2, Sept. 1999.
Y.Nitta, T.Yamagata, Y.Takano and K.Shimomura, "1850A/W responsivity in
optically controlled MOSFET by illumination of 1.5um wavelength light,"
Proceedings of SPIE, vol.3630, pp.212-221, 1999.
R.Satrusajang, Y.Nitta, and K.Shimomura, "Steering characteristics of
GaInAs/InP MQW comb type waveguide optical deflector," Proceedings of SPIE,
vol.3620, pp.356-365, 1999.
R.Satrusajang, Y.Nitta, and K.Shimomura, "Steering characteristics of
GaInAs/InP MQW comb type waveguide optical deflector," SPIE's International
Symposium Optoelectronics '99, San Jose, California, USA, 3630-25, Jan. 1999.
Y.Nitta, T.Yamagata, Y.Takano and K.Shimomura, "1850A/W responsivity in
optically controlled MOSFET by illumination of 1.5um wavelength light," SPIE's
International Symposium Optoelectronics '99, San Jose, California, USA, 3620-45,
Jan. 1999.
K.Shimomura, T.Sakai, and Y.Nitta, "12dB current modulation by 1.55μm light
irradiation in integrated optically controlled HEMT," International Topical
Meeting on Microwave Photonics (MWP'98), Princeton, New Jersey, TuD5, Oct. 1998.
T.Yamagata, Y.Nitta, and K.Shimomura, "Gate length dependence of optical
characteristics in optically controlled MOSFET," 1998 International Conference
on Solid State Devices and Materials, Hiroshima, Japan, C-6-6, Sept. 1998.
T.Yamagata, K.Kinoshita, M.Sakurai, and K.Shimomura, "Current modulation
characteristics in directly-bonded optically controlled MOSFET," Third
Optoelectronics and Communications Conference, Chiba, Japan, 14P-31, July 1998.
T.Sakuma, R.Satrusajang, and K.Shimomura, "Deflection characteristics of the
InGaAs/InP MQW waveguide optical deflector," Third Optoelectronics and
Communications Conference, Chiba, Japan, 14P-27, July 1998.
T.Nagano, M.Haraguchi, T.Morita, M.Arai, H.Shinbo, I.Nomura, A.Kikuchi,
K.Shimomura, and K.Kishino, "High-reflectance 500-600nm range MgZnCdSe
distributed Bragg reflectors and quantum confined stark effect in
ZnCdSe/MgZnCdSe multiple quantum wells on InP substrates," The 8th International
Conference on II-VI Compounds, Grenoble, France, Th-P78, Aug. 1997.
T.Sakai, Y.Takesue, and K.Shimomura, "High On/Off ratio (12dB) and
responsivity (300A/W) in integrated optically controlled HEMT," 2nd
Optoelectronics and Communications Conference, Seoul, Korea, 10C2-5, July 1997.
T.Yamagata, T.Sakai, K.Sakata, and K.Shimomura, "High current modulation in
optically controlled MOSFET using direct-bonded SiO2-InP," International Topical
Meeting on Microwave Photonics, Kyoto, Japan, WE2-2, Dec. 1996.
T.Sakai and K.Shimomura, "High responsivity in optically-controlled
field-effect transistor using direct wafer bonding technique," 1996
International Conference on Solid State Devices and Materials, Yokohama, Japan,
D-4-2, Aug. 1996.
T.Kobayashi and K.Shimomura, "Numerical analysis of optical deflector using
FD-BPM," 1996 International Topical Meetings on Photonics in Switching (PS'96),
Sendai, Japan, PWC24, Apr. 1996.
Y.Shimizu, M.Suzuki, K.Funamoto, and K.Shimomura, "Optical properties of an
optically-controlled Metal-Oxide-Semiconductor field-effect transistor," The
Pacific Rim Conference on Laser and Electro-Optics (CLEO/Pacific Rim '95),
Chiba, Japan, WP3, July 1995.
T.Sakai and K.Shimomura, "Fabrication of optically-controlled field-effect
transistor using direct wafer bonding technique," 10th Internal Conference on
Integrated Optics and Optical Fiber Communication (IOOC-95), Hong Kong, FA3-6,
June 1995.
K.Funamoto, Y.Shimizu, and K.Shimomura, "New type of optically controlled
FET operating at 1.55μm," 15th Conference on Lasers and Electro-Optics
(CLEO'95), Baltimore, USA, CWD6, May 1995.
T.Takada, I.Nomura, S.Che, A.Kikuchi, K.Shimomura, and K.Kishino,
"Application of wide-gap and high p-dopable BeZnTe II-VI compounds on InP
substrates for visible light emitting diodes," International Symposium on
Ultra-Parallel Optoelectronics, Kawasaki, Japan, P-6, Feb. 2000.
M.Arai and K.Shimomura, "Formation of GaInAsP/InP microscopic waveguide
using mesa-etching and electrochemical anodization," The 13th Semiconductor
Laser Symposium (International), Yokohama, Japan, C-15, Mar. 1996.