We are studying Photonic Integrated Circuits.　　　▷Japanese

Selective metalorganic vapor phase epitaxy (MOVPE) is one of the most attractive methods for fabricating integrated multiple quantum well (MQW) optical waveguide devices. This is because different bandgaps of MQW structures can be easily realized in a wafer by changing only the dielectric mask geometry in a single selective MOVPE growth step. In addition, selective MOVPE in a narrow stripe region enables direct waveguide formation without a semiconductor etching process. The waveguide structures fabricated by the direct waveguide formative selective MOVPE process along the [011] directions on (100) substrates are automatically surrounded by the (100) and (111)B crystal planes. They have mirror surfaces and the waveguide dimension can be controlled with photolithographic accuracy of the dielectric mask patterning so that a well-controlled ideal optical waveguide structure can be realized. Using the above-mentioned advantages, advanced optical devices have been reported such as a precisely wavelength controlled laser diodes, and a low-loss passive optical waveguide. These excellent characteristics for the advanced waveguide devices are obviously attributed to the highly controllable and reproducible features of the direct-waveguide-formative selective MOVPE method.